Semiconductor analysts foresee MRAM as the future favorite, set to outshine SRAM and NOR flash in real-time data processing devices.
This non-volatile memory, with DRAM data access speeds, promises to surpass the scaling limits of NAND and NOR while consuming less energy than constantly refreshed DRAM and SRAM.
Spin-Ion Technologies play a crucial role in this revolution by enhancing the properties of magnetic materials and devices by using our ion beam process, paving the way for even more powerful MRAM devices.